Year: 2025
Type: article
Abstract: High‐temperature annealing significantly improves the crystal quality of sputter‐deposited AlN templates, but at the same time introduces a high concentration of oxygen‐related point defects. The origin of this oxygen‐related defect luminescence is studied using time‐resolved and temperature‐dependent cathodoluminescence spectroscopy. Characterization of the defect luminescence reveals a complex multiexponential decay, with a fast component of about 2 ns and slow components of tens to hundreds of nanoseconds. The slow decay is attributed to a donor–acceptor‐pair transition between an O N donor and mainly the ( V Al ‐ O N ) 2− and ( V Al ‐2 O N ) 1− defect complexes as acceptors, whereas the fast component is ascribed to a free electron to acceptor transition involving the same type of acceptors. Furthermore, the impact of these oxygen‐related defects on the quality and transparency of the AlN templates is discussed.
Source: physica status solidi (b)
Institution: Technische Universität Braunschweig
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: hybrid
Estimated APC paid: $3,650
Funder: Deutsche Forschungsgemeinschaft
OpenAlex ID: W4411102457