Work

Optimized dose modulation for controlled greyscale electron beam lithography for negative tone resist

Year: 2025

Type: article

Abstract: This study presents a systematic approach to optimizing dose modulation for precise greyscale electron beam lithography (EBL) using the negative tone resist AZ nLOF 2070. By establishing a correlation between local exposure dose and post-development resist height via the Rodbard equation, we generate dose distribution maps to guide the fabrication of complex micro-scale structures. A flood dose strategy is introduced to address underexposure in low-dose regions, significantly enhancing structural fidelity. Fabrication accuracy is quantitatively assessed through mean squared error (MSE) analysis, demonstrating high reproducibility across multiple samples and runs. Finally, the applicability of the method to nanoimprint lithography (NIL) is explored, highlighting its potential for scalable and precise greyscale patterning.

Source: Applied Surface Science

DOI: 10.1016/j.apsusc.2025.163638

Authors: Olli Ovaskainen, Tian-Long Guo, Matthieu Roussey

Institution: University of Eastern Finland

Language: English

Topic: Advancements in Photolithography Techniques

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: hybrid

Estimated APC paid: $3,930

Funders: Academy of Finland, HORIZON EUROPE Framework Programme