Work

Investigation of Degradation and Failure Mechanism in 1200-V Planar SiC MOSFET Under Statical Accelerated Lifetime Test

Year: 2025

Type: article

Source: IEEE Transactions on Device and Materials Reliability

DOI: 10.1109/tdmr.2025.3577612

Authors: J. Tang, Y. Duan, P. Liu

Institution: Fudan University

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Science and Technology Innovation 2025 Major Project of Ningbo

Awards: G2096965573, G7572918688

OpenAlex ID: W4411143003

FWCI: 0.924

Cites: 27

Cited by: 4

Related to: 10