Work

Epitaxy and Electronic Properties of Ultrawide Bandgap Aluminum Oxynitride Films

Year: 2025

Type: article

Source: ACS Applied Electronic Materials

DOI: 10.1021/acsaelm.5c00197

Authors: Peiyi Li, Yuyan Fan, Qiushuang Chen, Wei Chen, Shunda Zhang, Xinwei Wang, Wei Guo, Jie Sun, Xiuyan Li, Yanwei Cao

Institutions: Chinese Academy of Sciences, Ningbo Institute of Industrial Technology, Shanghai Jiao Tong University, National Key Laboratory of Science and Technology on Micro/Nano Fabrication, University of Chinese Academy of Sciences

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: Ningbo Municipal Bureau of Science and Technology, National Key Research and Development Program of China, Natural Science Foundation of Zhejiang Province, Key Research and Development Program of Zhejiang Province

Awards: G3418778323, 氮化物与氧化物异质界面的原子尺度研究, G5276622420, G7226018011, G8398589713

OpenAlex ID: W4411147732

FWCI: 0.455

Cites: 63

Cited by: 2

Related to: 10