Work

Analysis and Extraction of Electrically Effective Channel Length in the Subthreshold Operation of Junctionless Nanowire FETs

Year: 2025

Type: article

Abstract: In this work, the electrical length of Junctionless Nanowire Transistors operating in the subthreshold condition is analyzed. This work proposes an analytical model for the lat-eral depletion towards source/drain regions, which is validated using numerical simulations. Devices with different physical characteristics operating at different temperatures were con-sidered in validation. Besides that, a method for the effective channel length extraction based on the influence of short-chan-nel effects on the subthreshold slope is also presented, validated with the simulations, and applied to experimental devices.

Source: Journal of Integrated Circuits and Systems

DOI: 10.29292/jics.v20i1.937

Authors: Renan Trevisoli Doria, Everton Silva, Rodrigo Doria

Institutions: Centro Universitário FEI, Pontifícia Universidade Católica de São Paulo

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: diamond

Funders: Pontifícia Universidade Católica de São Paulo, Coordenação de Aperfeiçoamento de Pessoal de Nível Superior, Conselho Nacional de Desenvolvimento Científico e Tecnológico