Work

Evaluating Aging Effects Impact on Radiation Robustness of Combinational Gates in ASAP7 FinFet Technology

Year: 2025

Type: article

Abstract: This study investigates the impact of aging degradation on the performance of standard logic cells through simulations. The results show that aging affects the high-to-low (HL) and low-to-high (LH) transition times of logic gates, with simpler gates experiencing more aging than their counterparts with more inputs. Furthermore, more complex gates exhibit greater variability in degradation, particularly in HL transitions. The analysis also reveals that considering both Bias Temperature Instability (BTI) and Single Event Transient (SET) effects is crucial for designing reliable digital circuits. The comparison of BTI with SET effects relative to the fresh state highlights the significant impact of cell degradation on the robustness of logic gates.

Source: Journal of Integrated Circuits and Systems

DOI: 10.29292/jics.v20i1.965

Authors: Eduarda De Castro Guterres, Rafael Budim Schivittz, Paulo Francisco Butzen

Institutions: Universidade Federal do Rio Grande do Sul, Universidade Federal do Rio Grande

Language: English

Topic: Radiation Effects in Electronics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: diamond

Funders: Conselho Nacional de Desenvolvimento Científico e Tecnológico, Fundação de Amparo à Pesquisa do Estado do Rio Grande do Sul

OpenAlex ID: W4411169548

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