Work

Optimized lithographic-based nanofabrication processes for the giant piezoresistance characterization of individual silicon nanowires

Year: 2025

Type: article

Abstract: In this work, we aim to fabricate strained silicon nanowires (sSiNWs) to study their electric mobility and giant piezoresistance. Through techniques compatible with the CMOS technology, individual nanowires (NWs) were fabricated from strained silicon-on-insulator (sSOI) thin films with 0.8% biaxial strain. Subsequently, the buried oxide (BOX) was removed from the SOI film, thus suspending the NWs, and the new boundary condition of its surface induces mechanical stress amplification, now uniaxial in the NW longitudinal direction. The proposal is to stress the NWs to levels higher than those employed in industry and, hence, fabricate prototypes using a single-step fabrication protocol, yet with an optimized contact resistance. Parameter optimization can further result in the fabrication of MOSFETs based on a single ultra-strained NW in gate-all-around (GAA) topology, as well as chemical and physical sensors for various technological applications.

Source: Journal of Integrated Circuits and Systems

DOI: 10.29292/jics.v20i1.930

Authors: Kung Shao Chi, Lucas Barroso Spejo, Renato Amaral Minamisawa, Marcos Vinicius Puydinger dos Santos

Institutions: Universidade Estadual de Campinas (UNICAMP), FHNW University of Applied Sciences and Arts Northwestern Switzerland

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: diamond

Funders: Fundação de Amparo à Pesquisa do Estado de São Paulo, Conselho Nacional de Desenvolvimento Científico e Tecnológico, Universidade Estadual de Campinas