Work

pH Monitoring using BESOI MOSFET with different Sensing Regions

Year: 2025

Type: article

Abstract: This work explores the sensing regions of BESOI MOSFETs working as pMOS for pH detection using TCAD Sentaurus numerical simulation. A novel approach was employed to model the electrolyte, addressing the simulator's prior lack of a model for this material type, based on existing literature. The simulation results show that the BESOI pMOS present an increase in drain current levels for basic pH values and a decrease for acidic pH values, which is the opposite of what occurs in the case of the BESOI nMOS, in the previous work. Additionally, the voltages applied to the programming gate and the electrolyte were evaluated, and they influenced sensitivity due to the electrostatic coupling of the transistor operating as a pMOSFET.

Source: Journal of Integrated Circuits and Systems

DOI: 10.29292/jics.v20i1.935

Authors: Pedro Henrique Duarte, Ricardo Cardoso Rangel, Joao Antonio Martino

Institutions: Universidade de São Paulo, São Paulo State Technological College, Faculdade de Tecnologia de São Paulo

Language: English

Topic: Analytical Chemistry and Sensors

Subfield: Bioengineering

Field: Chemical Engineering

Domain: Physical Sciences

Open Access status: diamond

Funders: Fundação de Amparo à Pesquisa do Estado de São Paulo, Coordenação de Aperfeiçoamento de Pessoal de Nível Superior, Conselho Nacional de Desenvolvimento Científico e Tecnológico

Award: G8315727190