Design of 2T DRAM Cell With Surrounding Poly-Si Capacitor for Enhanced Retention and Mitigated Coupling Effect
Year: 2025
Type: article
Authors: Seonghwan Kong, Wonbo Shim
Institution: Seoul National University of Science and Technology
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W4411203126