Work

Achieving Forming-Free NbO x Mott Memristors With High Performance Through Lithium Intercalation

Year: 2025

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2025.3574134

Authors: Yihao Wang, Guohe Zhang, Chenrong Gong, Shujing Zhao, Yubin Yuan, Shiquan Fan, Juan Hu, Xin Li, Weihua Liu, Li Geng, Chuan Yu Han

Institutions: Xi'an Jiaotong University, Second Affiliated Hospital of Xi'an Jiaotong University

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, National Key Research and Development Program of China

Awards: G2453181766, G2871653000, G4155661557, G8612526644

OpenAlex ID: W4411203552

FWCI: 0.693

Cites: 32

Cited by: 3

Related to: 10