Work

Fabrication of β-Ga₂O₃ Schottky Photodetectors With ε-Ga₂O₃ Cap Layer via Temperature-Lowering Process Mist-CVD Heteroepitaxy

Year: 2025

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2025.3573270

Authors: Hao-Chun Hung, Chia-Cheng Hsu, Ching-Yu Cheng, Yin-Chu Hsiao, Chien-Sheng Cheng, Rong-Ming Ko, Han-Yin Liu, Wei-Chou Hsu

Institutions: National Cheng Kung University, National Sun Yat-sen University

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funder: National Science and Technology Council

Awards: G2124547312, G4370822837

OpenAlex ID: W4411203590

FWCI: 1.141

Cites: 51

Cited by: 7

Related to: 10