Work

Development and Analysis of Gate Underlap GaN Gate-All-Around FETs

Year: 2025

Type: conference-paper

Source: International Conference on Smart Systems for Applications in Electrical Sciences (ICSSES)

DOI: 10.1109/icsses64899.2025.11009664

Authors: Sneha Singh, Priya Devi, Rudra Sankar Dhar

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

SDGs: Industry, innovation and infrastructure, Affordable and clean energy

Open Access status: closed

OpenAlex ID: W4411204974

FWCI: 2.591

Cites:

Cited by: 1

Related to: 10