Work

Hexagonal Boron Nitride Memristor with Ultralow Operating Voltage Enabled by Noninvasive vdWs Electrode

Year: 2025

Type: article

Source: ACS Materials Letters

DOI: 10.1021/acsmaterialslett.5c00380

Authors: Yu Kang, Xingyu Zhai, Quan Yang, Jiayang Hu, Zhixiang Zhang, Jialei Miao, Haohan Chen, Dong Pu, Huan Hu, Wenchao Chen, Yuda Zhao, Bin Yu

Institutions: Zhejiang University, University of Illinois Urbana-Champaign

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: China Association for Science and Technology, National Natural Science Foundation of China, National Key Research and Development Program of China, Natural Science Foundation of Zhejiang Province

Awards: G1201590415, G1978276990, 后摩尔硅基异质集成神经形态计算关键技术, G215322120, G3437749660, 后摩尔光电融合新计算范式, G6386153180, G8241931165

OpenAlex ID: W4411215927

FWCI: 0.68

Cites: 36

Cited by: 3

Related to: 10