Work

A Novel Hybrid-Collector Tunneling IGBT With Enhanced Operating Temperature

Year: 2025

Type: article

Abstract: In this work, a novel Hybrid-Collector Tunneling IGBT (HCT-IGBT) structure is designed and investigated by TCAD simulation. With an integrated N-well region within the P-type collector and an extra N-type heavily doped tunneling layer under the field stop layer, HCT-IGBT effectively reduces the current amplification factor of the internal parasitic PNP transistor (composed of base, drift, and collector region). Thus, further significantly lowers the off-state leakage current of the device and enables an elevation of maximum operating temperature. Simulation results show that the leakage current of HCT-IGBT at 175∘C and 200∘C is reduced by 38% and 42% compared to conventional Carrier Stored Trench-Gate Bipolar Transistor (CSTBT). As a result, the maximum operating temperature can be significantly increased, which greatly improves the output power. Furthermore, HCT-IGBT exhibits comparable on-state voltage drop (Von) and switching losses (Eon, Eoff) to CSTBT, demonstrating that there is no degradation in the device’s conduction and switching performance. These breakthroughs position the HCT-IGBT as a promising candidate for next-generation high-temperature power electronics.

Source: IEEE Journal of the Electron Devices Society

DOI: 10.1109/jeds.2025.3579146

Authors: Chang-Hao Wang, Xin-Ru Chen, Jian-Bin Guo, Qing-Qing Sun, David Wei Zhang, Hang Xu

Institutions: Fudan University, State Key Laboratory of ASIC and System

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDGs: Affordable and clean energy, Industry, innovation and infrastructure

Open Access status: gold

Estimated APC paid: $1,350