Work

Study of Gate-Oxide Degradation Induced Mobility Change with Cryogenic Measurement

Year: 2025

Type: conference-paper

Source: IEEE Workshop on Microelectronics and Electron Devices (WMED)

DOI: 10.1109/wmed65750.2025.11026933

Authors: Le Minh Long Nguyen, Yi-Ann Chen, Donghun Kang, Hideki Takeuchi, Hiu Yung Wong

Institution: San Jose State University

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National Science Foundation

OpenAlex ID: W4411233047

FWCI:

Cites: 9

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Related to: 10