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Proposal of Block Erase and Verify Schemes for Ferroelectric NAND: Overcoming Critical Challenges from Threshold Voltage Polarity

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Year: 2025
Type: conference-paper
Source: IEEE International Memory Workshop (IMW)
DOI: 10.1109/imw61990.2025.11026990
Authors: Song-Hyeon Kuk, Bong Ho Kim, Youngkeun Park, Hyeon-Seong Hwang, Jae-Hoon Han, Byung Jin Cho, Byung Chul Jang, Sang-Hyeon Kim
Institutions: Korea Advanced Institute of Science and Technology, Korea Institute of Science and Technology, Kyungpook National University
Language: English

Topic: Ferroelectric and Negative Capacitance Devices
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences

Open Access status: closed

Funders: Korea Institute of Science and Technology, National Research Foundation of Korea
OpenAlex ID: W4411233172
FWCI: 2.358
Cites: 13
Cited by: 1
Related to: 10
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