Work

Comparative Study of Channel Materials for Ferroelectric NAND Applications

Year: 2025

Type: conference-paper

Source: IEEE International Memory Workshop (IMW)

DOI: 10.1109/imw61990.2025.11026973

Authors: Lance Fernandes, Prasanna Venkatesan, Mengkun Tian, Yu-Hsin Kuo, Nashrah Afroze, Salma Soliman, Sanghyun Kang, Dyutimoy Chakraborty, TaeYoung Song, Chengyang Zhang, Kijoon Kim, Kwangyou Seo, Kwangsoo Kim, Wanki Kim, Daewon Ha, Shimeng Yu, Suman Datta, Asif Khan

Institutions: Georgia Institute of Technology, Samsung Electronics (South Korea)

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4411233208

FWCI: 16.1

Cites: 11

Cited by: 7

Related to: 10