Work

Extraction of the Thermal Resistance of 1-mm Gate Periphery GaN-on-SiC RF HEMT

Year: 2024

Type: conference-paper

Source: International Conference on Electrical and Computer Engineering (ICECE)

DOI: 10.1109/icece64886.2024.11024921

Authors: Mohammad Abdul Alim, Tofayel Karim, Imdad Ahmed Jaman, Md. Omar Faruk Azad, Md. Asifur Rahman, Anwar Jarndal

Institutions: University of Chittagong, University of Sharjah

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4411233211

FWCI:

Cites: 10

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Related to: 10