Work

Monolithic 3D Stackable DRAM Design with BEOL-Compatible Oxide Channel Access Transistor

Year: 2025

Type: conference-paper

Source: IEEE International Memory Workshop (IMW)

DOI: 10.1109/imw61990.2025.11026931

Authors: Po-Kai Hsu, Sungwon Cho, Janak Sharda, Hyeonwoo Park, Suman Datta, Shimeng Yu

Institution: Georgia Institute of Technology

Language: English

Topic: 3D IC and TSV technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W4411233361

FWCI: 20.7

Cites: 1

Cited by: 9

Related to: 10