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Innovative V-NAND Flash Structure with Dual Trap Layer for Future Generations of Multi-Bit Device

Year: 2025

Type: conference-paper

Source: IEEE International Memory Workshop (IMW)

DOI: 10.1109/imw61990.2025.11026963

Authors: Jeongyoon Yeo, Joonsung Kim, Younghwan Son, Taein Lee, Sejun Park, Min-Kyu Jeong, Jung Hoon Lee, Suk-Kang Sung, Dongku Kang, Seungwan Hong, Sung Hoi Hur

Institutions: Samsung (South Korea), Samsung Electronics (South Korea)

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4411233375

FWCI:

Cites: 9

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Related to: 10