Work

Enabling Merged 3D NAND Memory Hole and Interlayer Dielectric (ILD) Contact Etches with Deposition and Etch Co-Optimization (DECO)

Year: 2025

Type: conference-paper

Source: IEEE International Memory Workshop (IMW)

DOI: 10.1109/imw61990.2025.11026958

Authors: John Hoang, George Matamis, Calvin Pham, Hao Chi, Jonathan Church, Pramod Subramonium

Institution: Lam Research (United States)

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4411233382

FWCI: 2.3

Cites: 15

Cited by: 1

Related to: 10