Year: 2025
Type: conference-paper
Abstract: We present a 1-kbit Static Random Access Memory (SRAM) using 600nm thin-film Indium Gallium Zinc Oxide (IGZO) technology from Pragmatic Semiconductor. This memory is designed for low-cost bendable applications that require flexible microprocessors. Operating at a low supply voltage of 1.6V, the SRAM cell achieves a Static Noise Margin (SNM) of 405 mV and consumes an average static power of 1.94 µW. The effective cell area is only 29.5µm x 31.75µm, making it the smallest reported for flexible SRAM. The memory array covers an area of 2.26 mm2and has a power consumption of 3.9 mW. The read and write access times are 1110 ns and 330 ns, respectively.
Institution: KU Leuven
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W4411233425