Enhancement‐Mode AlInGaN/GaN High‐Electron‐Mobility Transistor with p–i–n Junction and Recessed Gate
Year: 2025
Type: article
Source: physica status solidi (a)
Authors: Kai Niu, Haoxiang Lin, Lie Cai, Zhichao Chen, Yifei Chen, Zhiyu Ma, Zaijun Cheng, Haifeng Lin, Feibing Xiong
Institution: Xiamen University of Technology
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W4411235766