Work

Direct thermal atomic layer deposition of high- κ dielectrics on monolayer MoS 2 : nucleation and growth

Year: 2025

Type: article

Abstract: Investigation of the nucleation and growth of Al 2 O 3 and HfO 2 films grown directly on chemical vapour-synthesised monolayer MoS 2 via atomic layer deposition.

Source: Nanoscale

DOI: 10.1039/d5nr01144b

Authors: Brendan F. M. Healy, Sophie L. Pain, Nicholas E. Grant, John D. Murphy

Institution: University of Warwick

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: hybrid

Funders: Royal Academy of Engineering, University of Warwick, Engineering and Physical Sciences Research Council

Awards: EPRSC Resource Only Strategic Equipment: the Warwick Analytical Science Centre, G2980139275

OpenAlex ID: W4411236717

FWCI: 1.155

Cites: 89

Cited by: 5

Related to: 10