Work

Epitaxial growth of 4H-SiC layers on 4H-SiC vicinal off-cut substrates for GaN/SiC hybrid devices

Year: 2025

Type: article

Source: Materials Science in Semiconductor Processing

DOI: 10.1016/j.mssp.2025.109767

Authors: Kazutoshi Kojima, Akira Nakajima, Hisashi Yamada, Shinsuke Harada

Institution: National Institute of Advanced Industrial Science and Technology

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: Ministry of Education, Culture, Sports, Science and Technology, Nagoya University

Award: G3941873714

OpenAlex ID: W4411261690

FWCI: 0.693

Cites: 47

Cited by: 3

Related to: 10