Work

Fabrication and investigation of 1200V-class high voltage GaN HEMTs with different design strategies and inter-metal dielectric layers

Year: 2025

Type: article

Source: Semiconductor Science and Technology

DOI: 10.1088/1361-6641/ade470

Authors: Moufu Kong, Yingzhi Luo, Yaowen Zhang, Ning Yu, Kangxiang Zhao, Yufeng Li, Hongqiang Yang, Bingke Zhang

Institutions: University of Electronic Science and Technology of China, State Key Laboratory of Electronic Thin Films and Integrated Devices

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: Sichuan Province Science and Technology Support Program

OpenAlex ID: W4411264727

FWCI: 0.934

Cites: 32

Cited by: 3

Related to: 10