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A New Precise Analytical Modeling for Triangular Gate FinFETs with Quantum Effects

Year: 2025

Type: article

Source: IEEE Transactions on Dielectrics and Electrical Insulation

DOI: 10.1109/tdei.2025.3579447

Authors: M. Hemalatha, N. B Balamurugan, M. Suguna, D. Sriram Kumar

Institutions: Thiagarajar College of Engineering, Maulana Azad National Institute of Technology

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4411270801

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