Work

Analysis of Degradation Behavior and Mechanism of p-GaN Gate HEMT Under High-Power Microwave Irradiation

Year: 2025

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2025.3577140

Authors: Mingen Lv, Jing Xiao, Ming Tao, Yijun Shi, Zongqi Cai, Xinghuan Chen, Yuan Chen, Kai Tang, Min He, Guoguang Lu, Liang He

Institutions: Hunan University, China Electronic Product Reliability and Environmental Test Institute

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Natural Science Foundation of Guangdong Province, National Environmental Engineering Research Institute

Awards: G26874938, G3337357, G3807538042, G7362406149, G8610215793

OpenAlex ID: W4411270922

FWCI: 2.262

Cites: 34

Cited by: 7

Related to: 10