Work

Improved Performance of Yttrium Oxide-Based Memristor Through TiN Electrodes and Device Scaling for Neuromorphic and Pattern Recognition

Year: 2025

Type: article

Source: IEEE Transactions on Materials for Electron Devices

DOI: 10.1109/tmat.2025.3579714

Authors: Sanjay Kumar, Shalu Rani

Institution: Indian Institute of Technology Dhanbad

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Department of Science and Technology, Ministry of Science and Technology, India

OpenAlex ID: W4411271003

FWCI: 1.842

Cites: 57

Cited by: 8

Related to: 10