Growth of Monolayer WS2 Lateral Homojunctions via In Situ Domain Engineering
Year: 2025
Type: article
DOI: 10.1021/jacs.5c04546
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: closed
Funders: Agency for Science, Technology and Research, National University of Singapore, National Research Foundation Singapore, National Natural Science Foundation of China, Chinese Academy of Sciences, National Key Research and Development Program of China, Fundamental Research Funds for the Central Universities
OpenAlex ID: W4411276691
