Work

Gate-Tunable Schottky Diodes in MoS2/TiSe2 van der Waals Heterostructures

Year: 2025

Type: article

Source: ACS Applied Electronic Materials

DOI: 10.1021/acsaelm.5c00363

Authors: Guangjian Liu, Zhenyang Xiao, Jiawei Zhang, Linfeng Fei, Xiaxia Liao, Jiaren Yuan, Yangbo Zhou

Institution: Nanchang University

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Natural Science Foundation of Jiangxi Province, Major Discipline Academic and Technical Leaders Training Program of Jiangxi Province

Awards: G1745870024, G2904905273, G4067116875, G5175875662, G5219331310, G6029666547, G6188648530

OpenAlex ID: W4411277709

FWCI: 1.06

Cites: 41

Cited by: 5

Related to: 10