Work

Ionic conductivity of vanadium-doped tin disulfide for photovoltaic applications

Year: 2025

Type: article

Abstract: Tin disulfide (SnS 2 ) is an environmentally friendly and widely available material with a band gap ranging from approximately 2.20 to 2.45 eV, making it a strong candidate for use as a buffer layer in photovoltaic technologies.

Source: Physical Chemistry Chemical Physics

DOI: 10.1039/d5cp01255d

Authors: Shafi Ullah, Hanif Ullah, Abel García-Bernabé, Andreu Andrio, Bernabe Mari Soucase, Vicente Compañ

Institutions: Universitat Politècnica de València, Federal Urdu University, Universitat Jaume I

Language: English

Topic: Chalcogenide Semiconductor Thin Films

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: hybrid

Funders: Generalitat Valenciana, Universitat Politècnica de València

Awards: G2138719530, G436098763

OpenAlex ID: W4411278871

FWCI:

Cites: 31

Cited by:

Related to: 10