Work

High threshold voltage enhancement-mode AlGaN/GaN HEMT with double barrier hybrid gate

Year: 2025

Type: article

Source: Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena

DOI: 10.1116/6.0004577

Authors: Rukai Jiang, Xuhong Hu, Zhuokun He, Yaoze Li, Shengheng Ma, Qianyu Hou, Wenhong Sun

Institution: Guangxi University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, National Key Research and Development Program of China

Awards: G2393105949, G3290143546

OpenAlex ID: W4411281231

FWCI: 0.646

Cites: 34

Cited by: 2

Related to: 10