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Negative photoconductivity induced by carrier trapping in hyperdoped silicon

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Year: 2025
Type: article
Source: Materials Science in Semiconductor Processing
DOI: 10.1016/j.mssp.2025.109785
Authors: Z.B. Cao, X. Deng, H.W. Yang, Y.J. Chen, C. Wen, M. Chen, X.Y. Li, Y. Wei, B. Tan, Y. Ren
Institutions: Southwest University of Science and Technology, China Electronics Technology Group Corporation, Geely University of China, State Key Laboratory of Environmental-friendly Energy Materials
Language: English

Topic: Silicon and Solar Cell Technologies
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences

Open Access status: closed

Funders: China Electronics Technology Group Corporation, Outstanding Youth Science and Technology Talents Program of Sichuan
Awards: G4625614200, G8169590221
OpenAlex ID: W4411315558
FWCI: 1.126
Cites: 44
Cited by: 5
Related to: 10
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