Work

Design of 1.2 kV SiC MOSFETs by Using Internal SBDs for Enhancing Switching Characteristics

Year: 2025

Type: article

Source: The Transactions of The Korean Institute of Electrical Engineers

DOI: 10.5370/kiee.2025.74.5.894

Authors: Gyuhyeok Kang, Sangyeob Kim, Sumin Park, Dusan Beak, Hyowon Yoon, Ogyun Seok

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4411321101

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