Work

Design of a 1.2 kV SiC MOSFET Utilizing an H-Shaped Poly-Si Gate

Year: 2025

Type: article

Source: The Transactions of The Korean Institute of Electrical Engineers

DOI: 10.5370/kiee.2025.74.5.905

Authors: Dusan Baek, Hyowon Yoon, Sangyeob Kim, Gyuhyeok Kang, Sumin Park, Ogyun Seok

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W4411321110

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