Year: 2025
Type: article
Abstract: ABSTRACT The project presents the design and evaluation of a high-performance low noise amplifier (LNA) based on Gallium Nitride (GaN) technology. GaN is recognized for its superior performance in high-frequency environments, offering strong signal integrity and low noise operation, making it a suitable choice for advanced RF and microwave systems.A two-stage cascode amplifier architecture is employed to achieve enhanced gain, improved frequency response, and stable operation. The design process is supported by RF simulation tools that provide accurate analysis and help optimize the amplifier’s performance characteristics.To ensure effective signal transmission, carefully tuned input and output matching networks are integrated. These networks play a key role in impedance matching and minimizing signal reflections. In addition, the layout is designed to control parasitic effects, further improving consistency and efficiency.Overall, this LNA design is aligned with the requirements of modern high-frequency applications such as radar systems, satellite links, and wireless communications, where achieving low noise and stable amplification is critical. Keywords: Low Noise Amplifier (LNA), Gallium Nitride (GaN), High-Frequency RF Design
DOI: 10.55041/ijsrem50619
Author: Alladi Pravalika Yadav
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W4411326342