Work

Ultralow Saturation Voltage in WS2 Source-Gated Transistors with Self-Aligned and Fermi-Level-Depinned Contacts

Year: 2025

Type: article

Source: ACS Applied Electronic Materials

DOI: 10.1021/acsaelm.5c00749

Authors: Seongyun Yang, Donggyu Lee, Jihyun Kim

Institution: Seoul National University

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: Korea Research Institute for Defense Technology Planning and Advancement, Ministry of Trade, Industry and Energy

Awards: G2572957395, G2673191266, G4396182776

OpenAlex ID: W4411331620

FWCI: 0.414

Cites: 48

Cited by: 2

Related to: 10