Simulation of plasma-activated oxygen radical etching based on Penning ionization
Year: 2025
Type: article
Source: Plasma Science and Technology
Authors: Shitong 诗彤 NAI 佴, Jianhai 建海 HAN 韩, Wenbao 文宝 ZHAO 赵, Shaofeng 少锋 XU 徐, Jianjun 建军 SHI 石, Ying 颖 GUO 郭
Institutions: Donghua University, Fudan University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
Awards: G1571796806, G8733806925
OpenAlex ID: W4411334755