Work

Exploration of alternative gate dielectric materials for RADFET sensors

Year: 2025

Type: article

Abstract: RADFETs are a low-cost option for implementing a radiation sensor. The characteristics of their gate dielectric material is the key element due to its sensitivity to ionizing radiation. We have studied alternative (high-K and organic) materials to the conventional SiO 2 -based gate dielectric in order to improve the device performance. Electrical characterization in irradiated samples has been carried on to study the radiation response of each material to low levels of ionizing radiation. The HfO 2 -based samples have a much higher sensitivity per unit thickness than the SiO 2 -based ones. High-K based RADFETs show promising performance as gate dielectrics for future silicon based radiation sensors.

Source: Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms

DOI: 10.1016/j.nimb.2025.165775

Authors: E. Amat, C. Martínez-Domingo, C. Fleta, M. Mas-Torrent, M. Lozano

Institutions: Consejo Superior de Investigaciones Científicas, Institut de Microelectrònica de Barcelona, Institut de Ciència de Materials de Barcelona

Language: English

Topic: Radiation Effects in Electronics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: hybrid

Estimated APC paid: $2,810

Funders: European Commission, Horizon 2020 Framework Programme, European Regional Development Fund, Agencia Estatal de Investigación