Work

AlGaN/GaN HEMTs on Si by Self-Aligned TaN Contact Ledge for Low-Voltage RF Applications

Year: 2025

Type: article

Source: IEEE Microwave and Wireless Technology Letters

DOI: 10.1109/lmwt.2025.3578128

Authors: Weiyuan Wang, Jingxiong Chen, Yuanxi Jiang, Xiao Ma, Yuanda Zheng, Hong Wang

Institution: South China University of Technology

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: Science and Technology Development Fund

Awards: G3030383818, G3961190338, G4221044079, G4968752680

OpenAlex ID: W4411336422

FWCI: 0.323

Cites: 33

Cited by: 1

Related to: 10