Work

Hybrid FeFET-ECRAM Device for Enhanced Memory Window and Retention via Ion-Ferroelectric Synergy

Year: 2025

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2025.3580146

Authors: Jongseon Seo, Geonhui Han, Laeyong Jung, Ohhyuk Kwon, Hyunsang Hwang

Institution: Pohang University of Science and Technology

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National Research Foundation of Korea

Award: G1456874378

OpenAlex ID: W4411336850

FWCI: 0.924

Cites: 22

Cited by: 4

Related to: 10