Work

Correction: Synergistic crucible design and thermal-flow management for enhanced 4-inch AlN single crystal PVT growth: a combined numerical and experimental investigation

Year: 2025

Type: erratum

Abstract: Correction for ‘Synergistic crucible design and thermal-flow management for enhanced 4-inch AlN single crystal PVT growth: a combined numerical and experimental investigation’ by Wenliang Li et al. , CrystEngComm , 2025, 27 , 3219–3228, https://doi.org/10.1039/D5CE00214A.

Source: CrystEngComm

DOI: 10.1039/d5ce90082d

Authors: Wenliang Li, QianLing Liu, Jun Tan, Guangze He, Yingmin Wang, Zhenhua Sun, Baikui Li, Honglei Wu

Institutions: Shenzhen University, China Electronics Technology Group Corporation

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: hybrid

Funders: National Natural Science Foundation of China, Science, Technology and Innovation Commission of Shenzhen Municipality, National Key Research and Development Program of China, Special Project for Research and Development in Key areas of Guangdong Province

Awards: G1735720951, G2082220940, G2855928129, G3098474341, G5950955694

OpenAlex ID: W4411385352

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