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Short-Circuit Failure Mechanism and Robustness Analysis of 15kV SiC IGBT

Year: 2025

Type: conference-paper

Source: International Conference on Energy, Electrical and Power Engineering (CEEPE)

DOI: 10.1109/ceepe64987.2025.11033695

Authors: Biao Yang, Hangzhi Liu, Yuming Zhou, Xiaopeng Dai, Qipei Xu, Xueyi Gong

Institution: Anhui University of Technology

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

Funder: Anhui University

OpenAlex ID: W4411402286

FWCI:

Cites: 15

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Related to: 10