Work

Study of the Cu(In,Ga)Se2 crystallization process through a combination of in-situ characterization techniques

Year: 2025

Type: article

Abstract: This study investigates the crystallization process of amorphous Cu(In,Ga)Se2 (CIGSe) through in-situ characterization techniques, specifically Raman spectroscopy, x-ray diffraction (XRD), and transmission electron microscopy (TEM). Amorphous CIGSe was deposited through sputtering of a ternary target with simultaneous supply of selenium by evaporation. A Se capping layer revealed to enhance crystallization at lower temperatures, yielding larger crystallites at 400 °C and larger crystal grains after the crystallization process. The A1 Raman mode of CIGSe appears at a lower temperature and with higher intensity in samples with Se capping compared to those without capping layer. The effect of temperature on the Raman spectra was considered by fitting post-crystallization data with a three-phonon coupling model, allowing for deconvolution of the thermal and material crystallization effects. In-situ XRD data corroborate the Raman data and revealed the formation of MoSe2 and Cu2Se secondary phases at 250 °C and 400 °C, respectively. Moreover, in-situ TEM allowed to further assess crystal growth during the crystallization process.

Source: Journal of Physics Energy

DOI: 10.1088/2515-7655/ade5c6

Authors: José Fonseca, Carlos J Tavares, Alec P LaGrow, Zakaria Ziadi, Oleksandr Bondarchuk, Sascha Sadewasser

Institutions: International Iberian Nanotechnology Laboratory, Centro de Física das Universidades do Minho e do Porto, University of Minho, Okinawa Institute of Science and Technology Graduate University

Language: English

Topic: Chalcogenide Semiconductor Thin Films

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $2,900

Funder: Fundação para a Ciência e a Tecnologia