High reliable fast write with boosted word line low leakage power and energy efficient 12T SRAM cell
Year: 2025
Type: article
Source: Engineering Research Express
Authors: Priyanka Sharma, Vaibhav Neema
Institution: Devi Ahilya Vishwavidyalaya
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W4411405932