Work

Enhancing RRAM Reliability: Exploring the Effects of Al Doping on HfO 2 -Based Devices

Year: 2025

Type: article

Source: IEEE Transactions on Device and Materials Reliability

DOI: 10.1109/tdmr.2025.3581061

Authors: Andrea Baroni, Eduardo Pérez, Keerthi Dorai Swamy Reddy, Stefan Pechmann, Christian Wenger, Daniele Ielmini, Cristian Zambelli

Institutions: Leibniz Institute for High Performance Microelectronics, Technical University of Munich, Politecnico di Milano, University of Ferrara

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: Deutsche Forschungsgemeinschaft, European Research Council

Award: SFB 1461: Neuroelektronik: Biologisch inspirierte Informationsverarbeitung

OpenAlex ID: W4411406685

FWCI: 1.586

Cites: 29

Cited by: 7

Related to: 10