A Spectral Analysis Method for Modeling EMI Source Considering High-Frequency Ringing Effects in SiC MOSFETs
Year: 2025
Type: conference-paper
Institution: Nanjing University of Aeronautics and Astronautics
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W4411409284
