Work

Design and High Breakdown Voltage Realization of SOI-LDMOS Devices with Inclined Buried Oxide Layer Structure

Year: 2025

Type: conference-paper

DOI: 10.1109/eeice65049.2025.11033944

Authors: Jie Luo, Zijian Cui, Jieliang Gu, Yi Chen, Huixiang Huang

Institution: Xiamen University of Technology

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W4411409308

FWCI: 4.717

Cites: 3

Cited by: 2

Related to: 10