Work

Comparative Analysis of Recessed-Gate AlGaN/GaN HEMTs with GaN and β-Ga2O3 Buffer Layers

Year: 2025

Type: conference-paper

Source: International Conference on Distributed Computing and Electrical Circuits and Electronics (ICDCECE)

DOI: 10.1109/icdcece65353.2025.11035565

Authors: Lakshmi Priya K, S. Karthik, V. Sandeep

Institution: SRM Institute of Science and Technology

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4411409393

FWCI:

Cites: 11

Cited by:

Related to: 10